A Lower-Energy Pathway for the Creation of Multifunctional Silicon Suboxide Films
Year: 2025
Type: article
Abstract: The possibility of inducing structural crosslinking and densification of plasma-deposited SiOx networks, by controlling low energy reaction mechanisms was investigated. For this, films were deposited for 300 s from HMDSO (2%), O2 (86%) and Ar (12%) mixtures at a working pressure of 15.7 Pa. A radiofrequency signal was used to excite the plasma in a configuration to not deliberately induce ion bombardment of the growing layers. Plasma excitation power was varied (100 to 300 W) to promote changes in the deposition mechanisms, which were investigated from deposition rate and layer thickness, chemical structure, elemental composition, topography, roughness, hardness, elastic modulus, corrosion potential, corrosion current density and porosity of the films. Under the experimental conditions studied, inorganic SiOx thin films (x=1.8-1.9) with low carbon content were deposited. The increase in the applied power during the deposition process reduced the number of silanol groups in the coatings, which became more compact, and consequently, harder and more corrosion resistant.
Source: Materials
DOI: 10.3390/ma18050962
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,137
OpenAlex ID: W4407840711