Work

A Compact Model with Self-Heating Effect Applying to the SCR Device for ESD Protection

Year: 2025

Type: article

Abstract: This work develops a novel compact Silicon-Controlled Rectifier (SCR) model incorporating self-heating effects, extending the conventional Ebers–Moll (E–M) framework for Bipolar Junction Transistors (BJTs) by comprehensively integrating parasitic effects. The temperature dependence of critical device parameters, including junction capacitances, emitter resistances, and saturation currents, is systematically characterized to accurately predict the device’s electrical behavior under Electrostatic Discharge (ESD) stress. Furthermore, a self-heating modeling approach is introduced based on the SCR layout characteristics. The impact of self-heating on SCR transient response was verified by comparing simulation results with measurements from SCR devices fabricated in a 0.18 µm Bipolar-CMOS-DMOS (BCD) process. Comparative analysis demonstrates superior accuracy over existing models. The proposed SCR model includes a complete definition of parameters and electrical relationships, ensuring compatibility with various Electronic Design Automation (EDA) platforms.

Source: Electronics

DOI: 10.3390/electronics14050843

Authors: Hongkun Wang, Hailian Liang, Junliang Liu

Institutions: Jiangnan University, Wuxi University

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,896

Funder: Fundamental Research Funds for the Central Universities