Suppressing oxygen vacancy formation in ZrO2 to improve electrical properties by employing MoO2 bottom electrode
Year: 2025
Type: article
DOI: 10.1116/6.0004351
Authors: Jaehyeon Yun, Seungyeon Kim, Chaeyeong Hwang, Woojin Jeon
Institution: Kyung Hee University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Kyung Hee University
Award: G6146695792
OpenAlex ID: W4407845676