Work

Electrically Driven Strain‐Activated Defect Emission from Hexagonal Boron Nitride at Room Temperature

Year: 2025

Type: article

Source: physica status solidi (RRL) - Rapid Research Letters

DOI: 10.1002/pssr.202400421

Authors: Yongchen Chen, Haoyun Huang, Maowen Ge, Wenfei Li, Lan Zhang, Wei Du, Tao Wang

Institution: Soochow University

Language: English

Topic: Boron and Carbon Nanomaterials Research

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Science and Technology Program of Suzhou

Awards: 自组装单分子层隧道结中导电通道间的相关性的可视化研究, G6626996882, G7260301154, G8877758342

OpenAlex ID: W4407860965

FWCI: 0.414

Cites: 52

Cited by: 2

Related to: 10