Work

Electron thermometry for Si MOS inversion layer using proximity nano-transistor and its application to Joule-heating experiment

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0239500

Authors: Hossain Md Nayem, Masahiro Hori, Katsuhiko Nishiguchi, Yukinori Ono

Institutions: Shizuoka University, NTT Basic Research Laboratories

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Awards: Hydro-electronics based on Si MOS structure, Superconductivity based on Si MOS structure, 高感度電子スピン共鳴法の開発とこれを用いたナノMOSトランジスタのRTN欠陥解析

OpenAlex ID: W4407879843

FWCI:

Cites: 42

Cited by:

Related to: 10