Year: 2025
Type: article
Abstract: Self-heating in surround gate (e.g., nanosheet, nanowire, and FinFET) transistors degrades their on-current performance and reduces their lifetime. If a transistor heats/cools with time constants much shorter than the inverse of the operating frequency, predictable, frequency-independent performance is expected; if not, the operating frequency must be optimized for the highest performance. Typically, time constants are measured by expensive, ultra-fast instruments with high temporal resolution. Instead, here, we demonstrate an alternate, inexpensive, cyclostationary measurement technique to characterize self-heating (and cooling) with sub-microsecond resolution. The results are independently confirmed by direct imaging of the transient heating/cooling of the channel temperature by the thermoreflectance method. Routine use of the proposed technique will help improve the design of the surrounding gate transistors and shorten their design cycle.
Source: Applied Physics Letters
DOI: 10.1063/5.0222652
Institution: Purdue University West Lafayette
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4407880370