Work

6-inch AlN epitaxial films with low dislocation densities via MOCVD

Year: 2025

Type: article

Source: Journal of Semiconductors

DOI: 10.1088/1674-4926/24110030

Authors: Shunpeng Lu, Jianwei Ben, Ke Jiang, Shanli Zhang, Ruojia Zhang, Jialong Hao, Zhongxu Liu, Wenchao Sun, Zikai Nie, Xiaojuan Sun, Dabing Li

Institutions: Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, University of Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407916041

FWCI: 4.524

Cites: 34

Cited by: 14

Related to: 10