Work

Interplay and Effects of Atomicity, Polarization Fields, and Quantization on Variability in GaN FinFETs: A Multiscale Numerical Analysis

Year: 2024

Type: conference-paper

Source: IEEE Nanotechnology Materials and Devices Conference (NMDC)

DOI: 10.1109/nmdc58214.2024.10894613

Authors: Salim I. Almenshad, Aqeel Y. Alalawi, Shaikh S. Ahmed

Institution: Southern Illinois University Carbondale

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

Award: CDS&E: Coupled Thermal, Piezoelectric, and Hot Carrier Effects in AlGaN/GaN HEMTs: Multiscale Modeling of Time Evolution of Device Degradation

OpenAlex ID: W4407938313

FWCI: 1.159

Cites: 10

Cited by: 1

Related to: 10