Work

ML-Driven Compact Models for RRAMs: Addressing Variability and Simulation Efficiency

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3545909

Authors: Giyong Hong, In Huh, Joo Hyung You, Jae Myung Choe, Younggu Kim, Changwook Jeong

Institutions: Ulsan National Institute of Science and Technology, Purdue University West Lafayette, Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ulsan National Institute of Science and Technology, Ministry of Science and ICT, South Korea, Samsung

Awards: G1829140252, G3327967787

OpenAlex ID: W4407948770

FWCI: 1.36

Cites: 28

Cited by: 6

Related to: 10