Work

A Comprehensive Study on Recess Gated Fe-Doped AlN/GaN/AlGaN HEMT for Next Generation Broadband Power Amplifiers

Year: 2024

Type: conference-paper

Source: International Conference on System, Computation, Automation and Networking (ICSCAN)

DOI: 10.1109/icscan62807.2024.10894007

Authors: B. Mounika, J. Ajayan, Sivaraj. M

Institutions: SR University, Sri Manakula Vinayagar Educational Trust

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407950299

FWCI:

Cites: 15

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Related to: 10