Work

Significant Improvement in Channel Control by Adjusting Insulator Thickness in CNTFETs to Enhance Drain Current Compared with Traditional High “k” Di-Electrics

Year: 2024

Type: conference-paper

Source: International Conference on System, Computation, Automation and Networking (ICSCAN)

DOI: 10.1109/icscan62807.2024.10894407

Authors: Sathish G, Radhika Baskar

Institution: Saveetha University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4407950327

FWCI: 0.806

Cites: 8

Cited by: 1

Related to: 10