Work

All-Solution Fabricated MXene/GaAs Self-Driven Photodetector with an Inserted Graphene Oxide Interface Layer

Year: 2025

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.4c21347

Authors: Bingchao Wu, Shujuan Zhu, Longfeng Lv, Hanxiao Shao, Yun Xu

Institutions: Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences

Language: English

Topic: MXene and MAX Phase Materials

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Chinese Academy of Sciences, National Key Research and Development Program of China

Awards: G3348901589, G4821546602, G5038042195, 甚长波红外量子级联探测器关键技术研究, G5384080737, G5414889904

OpenAlex ID: W4407956315

FWCI: 2.332

Cites: 66

Cited by: 11

Related to: 10