Complementary logic-in-memory inverters integrating n-channel and p-channel ferroelectric organic transistors
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0245757
Institution: Jilin University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G1574853077, G4520143811
OpenAlex ID: W4407961563
