Work

Vertical Al2O3/GaN MOS capacitors with PEALD-GaOx interlayer passivation

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0245266

Authors: Renqiang Zhu, Jinpei Lin, Hong Gu, Lixuan Chen, Bo Zhang, Hezhou Liu, Xinke Liu

Institutions: University of Electronic Science and Technology of China, Shenzhen University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Key Research and Development Program of China

Award: G3651175047

OpenAlex ID: W4407965043

FWCI: 1.246

Cites: 36

Cited by: 4

Related to: 10