Work

Gate Leakage Current Characterization and Remaining Useful Lifetime Prediction in Silicon Carbide MOSFETs

Year: 2025

Type: article

Source: IEEE Transactions on Transportation Electrification

DOI: 10.1109/tte.2025.3546928

Authors: Mustafa Murat Sezer, Fatih Akici, Mojtaba Afshar, Bhanu Teja Vankayalapati, Bilal Akin

Institution: The University of Texas at Dallas

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Texas Instruments

OpenAlex ID: W4408071490

FWCI: 1.803

Cites: 23

Cited by: 8

Related to: 10