Work

An Ultra‐Wideband GaN PA MMIC With High‐Efficiency

Year: 2025

Type: article

Abstract: ABSTRACT In this work, a three‐stage ultra‐wideband and high‐efficiency monolithic microwave integrated circuit (MMIC) power amplifier (PA) from 17 to 41 GHz has been designed and realized. The available bandwidth, efficiency, output power, and drain voltage of the transistor have been thoroughly considered during the PA design. Additionally, the gate peripheries of the driving stage ratio are set as 1:1.5 to prevent premature saturation of the driving stage. Pulse measurements show that the PA has a saturated output power greater than 1.2 W across 83% of the fractional bandwidth (FBW). The power gain is over 15 dB with less than 1 dB variation, and it reaches a peak output power and PAE of 32.5 dBm and 33%, respectively. This PA presents notable wideband performance and advantages in comparison with other PAs in previous works.

Source: Microwave and Optical Technology Letters

DOI: 10.1002/mop.70151

Authors: Li Zhang, Xuefeng Zheng, Pengbo Du, Hanbin Qu, Shujun Cai

Institutions: Xidian University, China Electronics Technology Group Corporation

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funder: National Natural Science Foundation of China

Awards: G3496033619, G6167179484