Work

Threshold-Switching Memristors for Neuromorphic Thermoreception

Year: 2025

Type: article

Abstract: Neuromorphic devices emulating the temperature-sensing capabilities of biological thermoreceptors hold significant promise for neuron-like artificial sensory systems. In this work, Bi2Se3-based threshold-switching memristors were presented in constructing temperature-sensing neuron circuits, leveraging its exceptional attributes, such as high switching ratio (>106), low threshold voltage, and thermoelectric response. The spiking oscillation response of the devices to resistance and temperature variations was analyzed using Hspice simulation of the memristor model based on its resistance in on/off states, threshold voltage (Vth), and hold voltage (Vhold). These results show the great potential of the Bi2Se3-based memristor in enabling biorealistic thermoreception applications.

Source: Sensors

DOI: 10.3390/s25051533

Authors: Haotian Li, Chunsheng Jiang, Qilin Hua

Institutions: Beijing Institute of Technology, Guangxi Normal University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,137

Funder: National Natural Science Foundation of China