Work

Instability Mechanism in Thermoelectric Mg2(Si,Sn) and the Role of Mg Diffusion at Room Temperature

Year: 2025
Type: article
Abstract: Thermoelectric Materials In article number 2300298, Amandine Duparchy, Byungki Ryu, Johannes de Boor, and co-workers assess stability criteria and degradation in Mg2(Si,Sn), a high performance thermoelectric material. It is revealed that the reaction of loosely bound Mg with moisture and the subsequent diffusion of Mg via vacancies leads to a relatively fast degradation of Sn-rich compositions already at room temperature, while Si-rich compositions are stable, indicating superior suitability for widespread applications in Mg2(Si,Sn)-based thermoelectric generators.
Language: English
Open Access status: gold
Estimated APC paid: $6,350
OpenAlex ID: W4408094596
FWCI: 1.06
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Cited by: 5
Related to: 10