Comprehensive physical and chemical properties of sulfurized Bi2S3 films prepared by CBD process
Year: 2025
Type: article
Abstract: Bismuth sulfide (Bi 2 S 3 ) is one of the novel semiconductors that has gained significant interest in recent years for the development of solar photovoltaics. The present work reports a comprehensive analysis of the physical and chemical properties of chemical bath deposited (CBD) Bi 2 S 3 films upon sulfurization in relation to sulfurization temperature. The as-grown Bi 2 S 3 films were subjected to sulfurization at temperatures ranging from 250 °C to 400 °C for a duration of one hour. X-ray diffraction patterns indicated the (130) plane as the predominant orientation for all sulfurized layers, which exhibited the orthorhombic crystal structure. Films prepared at 350 °C showed large crystallites with minimum lattice strain and dislocation density. Raman spectra exhibited three major peaks that correspond to the A g and B 1 g vibrational modes of Bi 2 S 3 with a space group of Pbnm. The films exhibited a rough surface morphology that increased with increasing sulfurization temperature. Energy dispersive spectroscopy study confirmed the nearly stoichiometric composition of Bi and S, whereas the X-ray photoelectron spectroscopy analyses revealed the presence of Bi 3+ and S 2 − oxidation states. With increasing sulfurization temperature, the optical band gap values decreased from 1.66 eV to 1.37 eV, which closely aligns with optimal absorber layer requirements. Hall effect measurements revealed p-type conductivity, with the lowest resistivity value 0.24 Ω.cm at T s = 350 °C. The Bi 2 S 3 films sulfurized at 350 °C exhibited good structural, morphological, optical, and electrical properties that are highly suitable for absorber layers in thin-film solar cells in a cost-effective manner. • Bi 2 S 3 films prepared via chemical bath deposition followed by sulfurization. • Films sulfurized at 350 °C exhibited near stoichiometry and enhanced crystallinity. • Optical band gap reduced from 1.66 eV to 1.37 eV with higher sulfurization. • XPS analysis confirmed Bi 2 S 3 structure with Bi 3+ and S 2- oxidation states. • Films sulfurized at 350 °C showed p-type conductivity and low resistivity.
Source: Next Materials
Authors: V. Gopala Krishna, G. Phaneendra Reddy, N. Revathi, K.T. Ramakrishna Reddy
Institution: Sri Venkateswara University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,280
OpenAlex ID: W4408124733