Work

Demonstration of optical polarization control for surface emission from c-plane InGaN quantum wells and determination of anisotropic deformation potential in InGaN alloy materials by applying external uniaxial stress

Year: 2025

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/adb191

Authors: Keito Mori-Tamamura, Atsushi A. Yamaguchi, Maho Ohara, Tomohiro Makino, Rintaro Koda, Tatsushi Hamaguchi

Institutions: Kanazawa Institute of Technology, Sony Semiconductor Solutions Corporation (Japan), The University of Osaka, Mie University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Award: ワイドギャップ半導体デバイスシミュレーションのための物性物理モデル構築

OpenAlex ID: W4408126185

FWCI: 0.323

Cites: 36

Cited by: 1

Related to: 10