Work

Nanoscale direct patterning in ultrathin silicon nanosheets utilizing helium ion microscopy

Year: 2025

Type: article

Abstract: Using focused helium-ion irradiation by helium-ion microscopy (HIM), we demonstrated the formation of nanosized hole arrays (nanopore arrays) on ultrathin (<3.6 nm) silicon nanosheets. Nanoscale patterning was conducted by setting the helium ion (He+) acceleration energy to 30 keV and modulating the ion dose to the irradiated area from 1 × 1017 to 1019 cm−1. The He+ irradiated area was observed as a bright spot on the HIM image at a low dose, which changed to an etch pit-like shape as the dose increased. Cross-sectional transmission electron microscopy (XTEM) observations indicated that the nanosheet where the He+ was irradiated vanished under the increased dose condition, and the area without irradiation was preserved. Simultaneously, blistering was observed over the entire area where the nanopore array was formed. In the XTEM image, a space was formed between the buried oxide film and the Si layer owing to ion implantation.

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/adbc70

Authors: Yukinori Morita, Kensuke Inoue, Ryuichi Sugie, Shinichi Ogawa

Institutions: National Institute of Advanced Industrial Science and Technology, Toray Research Center, Inc. (Japan)

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Computational Mechanics

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,210

Funder: Japan Society for the Promotion of Science