Work

Terahertz low-loss bent waveguide with multi-step transition utilizing silicon-based DRIE process

Year: 2025

Type: article

Abstract: This paper reports a waveguide for terahertz electromagnetic wave transmission, featuring a complex multilayer stepped bend waveguide. The waveguide was fabricated on a silicon wafer using deep reactive ion etching, which had better mechanical performance compared to Silicon-On-Insulator based etching. After etching, the wafer underwent gold plating, low-temperature bonding, and dicing to produce the silicon waveguide, overcoming the integration challenges and slow processing of metal based waveguides. The experimental work focuses on investigating the key fabrication parameters that influence the waveguide’s transmission performance, as well as optimizing the Bosch process for etching the multi-layer stepped structure. Finally, an analysis was conducted on the differences between the measurement and simulation results. Results showed that the insertion loss of the waveguide was about 0.5 dB within the 300-530 GHz, achieving low-loss terahertz electromagnetic wave transmission.

Source: IEICE Electronics Express

DOI: 10.1587/elex.22.20250016

Authors: Haohua Zhang, Jun Li, Hua Wang, Bo Zhang, Fengwei Dai, Xinyu Zhang

Institutions: Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing University of Posts and Telecommunications, National Center for Advanced Packaging (China), University of Electronic Science and Technology of China

Language: English

Topic: Microwave Engineering and Waveguides

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: diamond

OpenAlex ID: W4408158440

FWCI:

Cites: 31

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Related to: 10