Work

Thermal Annealing-Driven Modulation of Charge Trapping and Synaptic Plasticity in a Sol–Gel AlOx-Based Floating Gate Transistor

Year: 2025

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.5c00954

Authors: Sneha Bhise, Young-Seok Song, Dae-Hong Kim, Qun-Gao Chen, Hee Yun Yang, Ankita Nikam, Byung Joon Moon, Sukang Bae, Sungjun Park, Seoung-Ki Lee, Hyunjung Lee, Chu-Chen Chueh, Tae-Wook Kim

Institutions: Jeonbuk National University, National Taipei University of Technology, Korean Association Of Science and Technology Studies, Korea Institute of Science and Technology, Ajou University, Pusan National University, National Taiwan University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Jeonbuk National University

OpenAlex ID: W4408160667

FWCI: 1.595

Cites: 59

Cited by: 7

Related to: 10