Work

Investigation of the Impact of 10 nm High-κ SrTiO3 Gate Dielectric on the Performance of β-Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.4c02221

Authors: Madani Labed, Dae Haa Ryu, Jang Hyeok Park, Hyunbin Chung, Taekjib Choi, You Seung Rim

Institution: Sejong University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Korea Evaluation Institute of Industrial Technology

Awards: G5941094096, G8238934666

OpenAlex ID: W4408163879

FWCI: 0.163

Cites: 43

Cited by: 1

Related to: 10