Work

Monolithically Integrated Bootstrapped Gate Driver With a 200-V GaN Power Switch

Year: 2025

Type: article

Source: IEEE Transactions on Circuits and Systems I Regular Papers

DOI: 10.1109/tcsi.2025.3542714

Authors: Katia Samperi, Urmimala Chatterjee, Stefaan Decoutere, Salvatore Pennisi

Institutions: University of Catania, IMEC

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

Funder: European Commission

OpenAlex ID: W4408182469

FWCI: 1.869

Cites: 42

Cited by: 6

Related to: 10