Work

Thermal Characterization and Design of AlN/GaN/AlN HEMTs on Foreign Substrates

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3548853

Authors: Seokjun Kim, Eungkyun Kim, Husam Walwil, Daniel C. Shoemaker, Jimy Encomendero, Matthew T. DeJarld, Maher B. Tahhan, Eduardo M. Chumbes, Jeffrey R. Laroche, Debdeep Jena, Huili G. Xing, Sukwon Choi

Institutions: Pennsylvania State University, Cornell University, Raytheon (United States), RTX (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Defense Advanced Research Projects Agency, Army Research Office

Awards: G3911880680, G5994051922

OpenAlex ID: W4408182706

FWCI: 6.785

Cites: 29

Cited by: 21

Related to: 10