Work

Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3548905

Authors: Yifan Wang, Ming Xiao, Zineng Yang, Matthew Porter, Kai Cheng, Qihao Song, Ivan Kravchenko, Yuhao Zhang

Institutions: Virginia Tech, Xidian University, Oak Ridge National Laboratory, Center for Nanophase Materials Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408182727

FWCI: 3.101

Cites: 31

Cited by: 10

Related to: 10