Work

Damage-Free Neutral Beam Etching for Gate Recess in E-Mode AlGaN/GaN HEMTs

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3548676

Authors: Yi-Ho Chen, Fu-Chuan Chu, Muhammad Aslam, Yao-Jen Lee, Yiming Li, Seiji Samukawa

Institutions: National Yang Ming Chiao Tung University, National Chung Shan Institute of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Award: G403275404

OpenAlex ID: W4408183019

FWCI: 1.939

Cites: 16

Cited by: 6

Related to: 10