Work

High-Performance Broadband Mixed-Dimensional Phototransistors Based on the Boron Nitride Quantum Dots/MoSe2 Heterostructure with Enhanced UV Sensitivity

Year: 2025

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.4c21855

Authors: Huiying Chen, Nan Zhang, Chunlu Chang, Zhilin Liu, Yaru Shi, Xingyu Zhao, Shaojuan Li, Bin Duan, Hongwei Liang

Institutions: Chinese Academy of Sciences, Dalian University of Technology, Changchun Institute of Optics, Fine Mechanics and Physics, University of Chinese Academy of Sciences, Jilin University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Jilin Province, National Natural Science Foundation of China, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, National Key Research and Development Program of China, Changchun Science and Technology Planning Project

Awards: G1012329800, G1328912586, G2188755216, G222798072, G3818663565, G5063899986, G6118824829, G8826343620, G8945856108

OpenAlex ID: W4408184566

FWCI: 0.212

Cites: 44

Cited by: 1

Related to: 10