Work

Enhanced Ultra-narrowband Fast Response Ultraviolet Photodetector based on GaN Homojunction with a Carbon-Doped Semi-insulating Intermediate Layer

Year: 2025

Type: article

Source: The Journal of Physical Chemistry Letters

DOI: 10.1021/acs.jpclett.5c00026

Authors: Shihao Fu, Danyang Xia, Rongpeng Fu, Yuefei Wang, Yurui Han, Chong Gao, Weizhe Cui, Bingsheng Li, Zhendong Fu, Si Shen, Aidong Shen

Institutions: Northeast Normal University, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, State Key Laboratory of Luminescence and Application, City College of New York

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, People's Government of Jilin Province, Key Technologies Research and Development Program, Fundamental Research Funds for the Central Universities

Awards: G3154617163, G3405793343, G3862396272, G4355890702, G5968790061, G8567071373, G870909567

OpenAlex ID: W4408186525

FWCI: 0.945

Cites: 57

Cited by: 3

Related to: 10