Research on the reliability of gate oxides in SiC MOSFETs
Year: 2025
Type: article
Abstract: SiC are highly regarded in modern electronic devices due to their exceptional high-temperature performance, high power handling capability, and high-frequency operation. Nevertheless, the reliability of these devices, particularly concerning the stability of the layer and the density of boundary state, poses significant limitations to their potential applications in extreme environments. This paper provides a systematic study of the reliability challenges encountered by SiC in practical applications, emphasizing the effects of gate oxide layer stability and interface state density on device performance. The findings indicate that interface defects and epitaxial layer quality are the primary determinants of gate oxide layer reliability. Additionally, this paper explores various reinforcement strategies to mitigate these issues.
Source: Theoretical and Natural Science
Author: Litao Chen
Institution: South China University of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4408237195