Work

Characterization of Dynamic $R_{\text{ON}}$ in GaN HEMTs

Year: 2024

Type: conference-paper

Source: IEEE Region 10 Conference (TENCON)

DOI: 10.1109/tencon61640.2024.10902940

Authors: Shu Yang, Jiahong Du, Shaocheng Li

Institutions: University of Science and Technology of China, Zhejiang University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G3472861482, G8014297320

OpenAlex ID: W4408258148

FWCI: 2.415

Cites: 15

Cited by: 2

Related to: 10