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Three-Terminal GaN-Based p-n Diode: From Device to Integrated Photonic Applications

Year: 2024

Type: conference-paper

Source: IEEE Region 10 Conference (TENCON)

DOI: 10.1109/tencon61640.2024.10902833

Authors: Muhammad Hunain Memon, Huabin Yu, Shi Fang, Fujiang Lin, Haiding Sun

Institutions: University of Science and Technology of China, Nanyang Technological University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408258202

FWCI:

Cites: 9

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Related to: 10