Work

Radio-Frequency GaN-on-Si HEMT Technology for Future Communication Applications (Invited)

Year: 2024

Type: conference-paper

Source: IEEE Region 10 Conference (TENCON)

DOI: 10.1109/tencon61640.2024.10902922

Authors: Geok Ing Ng, Hanlin Xie, Hanchao Li

Institutions: Agency for Science, Technology and Research, Institute of Microelectronics, Nanyang Technological University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4408258368

FWCI:

Cites: 9

Cited by:

Related to: 10