Work

Band Offsets at the Interface of 4H-SiC/SiO2

Year: 2025

Type: article

Abstract: The author through this brief communication wishes to publicize the findings of the band offsets at the Si-faced 4H-SiC/SiO2 interface through an intense and focused research in the area of Metal-Insulator-Semiconductor (MIS) characterization in an academic environment, since the starting of his Ph.D. in 1989 to eight years work from home from March 2017 to February 2025, a total of over 35 years.

Source: Applied sciences research periodicals.

DOI: 10.63002/asrp.32.854

Author: Ravi Kumar Chanana

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W4408263226

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