Work

Investigation and modeling mechanism on capacitance characteristic with electrical measurement to ferroelectric random access memory

Year: 2025

Type: article

Source: Physica Scripta

DOI: 10.1088/1402-4896/adbd07

Authors: Po-Hsun Chen, Tsung-Han Yeh, Yung-Fang Tan

Institutions: National Sun Yat-sen University, I-Shou University, National Defense University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Award: G585623357

OpenAlex ID: W4408278146

FWCI:

Cites: 32

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Related to: 10