Work

Investigating the Analytical Model of GaN HEMT Device to Identify the High-Frequency Oscillation in Bridge-Leg Circuits

Year: 2024

Type: conference-paper

Source: Proceedings of the Annual Conference of the IEEE Industrial Electronics Society

DOI: 10.1109/iecon55916.2024.10905658

Authors: Subhradip Mukherjee, Mahesh K. Mishra, N Lakshmi Narasamma

Institution: Indian Institute of Technology Madras

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408280967

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Cites: 20

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Related to: 10