Work

Unveiling Ferroelectric HZO Cryogenic Performance (4–300 K): Kinetic Barrier Engineering and Underlying Mechanism

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3546871

Authors: Dong Zhang, Yang Feng, Zijie Zheng, Chen Sun, Qiwen Kong, Yue Chen, Xiaolin Wang, Yuye Kang, Kaizhen Han, Gan Liu, Zuopu Zhou, Zhilun Zhang, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong

Institutions: National University of Singapore, University of Notre Dame, Shandong University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Education, National Natural Science Foundation of China

Awards: G1421334558, G1500950123, G229158256, G579105692

OpenAlex ID: W4408324640

FWCI: 2.54

Cites: 33

Cited by: 11

Related to: 10