Work

SiO₂/β-Ga₂O₃ (001) MIS Capacitors With Ideal Flat Band Voltage, Small Hysteresis, and Low Interface Traps

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3547295

Authors: Qihao Zhang, Dongyuan Zhai, Min He, Jiwu Lu

Institution: Hunan University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Changzhou City, National Natural Science Foundation of China, Natural Science Foundation of Hunan Province

Awards: G4625728070, G639061702, G7233198447

OpenAlex ID: W4408324666

FWCI:

Cites: 53

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Related to: 10