Work

Displacement Damage in an Irradiated 4H-SiC MESFET

Year: 2025

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2025.3550298

Authors: Steven C. Witczak, Wayne A. Martin, James W. Palko, Joseph R. Srour, Rokutaro Koga

Institution: The Aerospace Corporation

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Shenzhen Research and Development Program

OpenAlex ID: W4408325214

FWCI: 1.813

Cites: 47

Cited by: 8

Related to: 10