Work

X-Ray Irradiation-Induced VTH Instability in Schottky-Gate p-GaN HEMTs

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3545390

Authors: Yu Rong, Feng Zhou, Wenfeng Wang, Can Zou, Junfan Qian, Weizong Xu, Fangfang Ren, Dong Zhou, Dunjun Chen, Youdou Zheng, Rong Zhang, Hai Lu

Institutions: Collaborative Innovation Center of Advanced Microstructures, Nanjing University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Jiangsu Provincial Key Research and Development Program, Chongqing Municipality Key Research and Development Program of China

Awards: G4501938700, G6906729860, G808050238, G8300364466, G8896928034

OpenAlex ID: W4408325242

FWCI: 0.93

Cites: 38

Cited by: 3

Related to: 10