Work

A New Silicon Accumulation-Mode Trench Bidirectional Switch

Year: 2025

Type: article

Abstract: The bidirectional switch, or bidiswitch, is a key component widely used for battery protection. During charging and discharging of the battery, the bidiswitch should be able to handle sufficient current and to block high voltages all in both the directions. In this work, we propose a new type of silicon bidiswitch: the accumulation-mode trench bidiswitch (AM bidiswitch). Due to aggressive cell dimensions ($\leq 0.6 \; \mu $m), both the accumulation-mode field effect and the reduced surface field (RESURF) effect can be adopted, so that no separate p-body connection is required, and consequently, minimal specificon-resistances (${R}_{\text {on,sp}}$) and even minimal leakage currents (${I}_{\text {rev}}$) can be obtained. Based on a theoretical framework, an optimization guideline is presented using TCAD simulations. The results show${R}_{\text {on,sp}}$values ranging from 3.5 to 10.8 m$\Omega \cdot $mm2 for stripe (or 2-D) structures and 6.5 to 45.6 m$\Omega \cdot $mm2 for gate-all-around (GAA) structures, with breakdown voltages (BVs) ranging from 25 to 75 V. For high temperatures (${T} = {425} \; \text {K}$), the obtained minimal${I}_{\text {rev}}$ranges from 0.75 to over 5 mA for the stripe structures and from 0.1 to 0.4 mA for the GAA structures both for an active device area of$1 \; \text {mm}^{{2}}$.

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3546582

Authors: H. Abnavi, C. Steenge, J. W. Berenschot, N. R. Tas, R. J. E. Hueting

Institution: University of Twente

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Award: G5393881777