Work

Electrical Characterization and Reliability Studies of Through SI Interposer (TSI) with 5-Layer Frontside Cu Metal and 2-Layer Backside Cu RDL

Year: 2024

Type: conference-paper

Source: IEEE Electronics Packaging Technology Conference (EPTC)

DOI: 10.1109/eptc62800.2024.10909932

Authors: Ya-Ching Tseng, Daniel Lau, Calvin Chua Hung Ming, He Sifang, Hongyu Li

Institutions: Agency for Science, Technology and Research, Institute of Microelectronics

Language: English

Topic: 3D IC and TSV technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4408326022

FWCI:

Cites: 10

Cited by:

Related to: 10