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In Situ X‐Ray Photoelectron Spectroscopy Study of Atomic Layer Deposited Cerium Oxide on SiO2: Substrate Influence on the Reaction Mechanism During the Early Stages of Growth (Adv. Mater. Interfaces 5/2025)

Year: 2025

Type: article

Abstract: Atomic Layer Deposition Understanding complex growth mechanisms and interface effects is crucial for tuning the properties of ultrathin functional materials. In article 2400537, Jan Ingo Flege and co-workers have utilized classic surface techniques for in situ characterization of atomic-layer-deposited cerium oxide to unravel film-substrate interactions and determine, depending on the film thickness, the growth behavior and chemistry of this prototypical reducible oxide.

Source: Advanced Materials Interfaces

DOI: 10.1002/admi.202570012

Authors: Carlos Morales, Max Gertig, Małgorzata Kot, Carlos Alvarado, Markus Andreas Schubert, Marvin Hartwig Zoellner, Christian Wenger, Karsten Henkel, Jan Ingo Flege

Institutions: Brandenburg University of Technology Cottbus-Senftenberg, Leibniz Institute for High Performance Microelectronics

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,100

OpenAlex ID: W4408326542

FWCI:

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