High‐Performance p‐NiO/β‐Ga2O3 Heterostructure Junction Field‐Effect Transistors with Mesa Field Plate Structure
Year: 2025
Type: article
Authors: SuZhen Luan, WenChong Gu
Institution: Xi'an University of Science and Technology
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Award: G2791178095
OpenAlex ID: W4408327984