Work

Strain- and dipole-induced interface states in gate-all-around transistors: Properties and implications for application

Year: 2025

Type: article

Source: Physical Review Applied

DOI: 10.1103/physrevapplied.23.034020

Authors: Yue-Yang Liu, Haoran Lu, Zirui Wang, Lang Zeng, Hui-Xiong Deng, Zhongming Wei, Lin-Wang Wang, Jun-Wei Luo, Runsheng Wang

Institutions: Institute of Semiconductors, Peking University, Beihang University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G2390305753, G2570175261, G5185416068, G942610218

OpenAlex ID: W4408330178

FWCI: 0.462

Cites: 29

Cited by: 2

Related to: 10