Work

Three-Dimensional Simulation of Bipolar Resistive Switching Memory with Embedded Conductive Nanocrystals in an Oxide Matrix

Year: 2025

Type: article

Abstract: In this work, the simulation of deoxidation–oxidation of oxygen vacancies (VOs) in an oxide matrix with embedded conductive nanocrystals (c-NCs) is carried out for the development of bipolar resistive switching memories (BRSMs). We have employed the three-dimensional kinetic Monte Carlo (3D-kMC) method to simulate the RS behavior of BRSMs. The c-NC is modeled as fixed oxygen vacancy (f-VO) clusters, defined as sites with zero recombination probability. The three-dimensional oxygen vacancy configuration (3D-VOC) obtained for each voltage step of the simulation is used to calculate the resistive state and the electrical current. It was found that the c-NC reduces the voltage required to switch the memory state from a high to a low resistive state due to the increase in a nonhomogeneous electrical field between electrodes.

Source: Chips

DOI: 10.3390/chips4010011

Authors: Juan Ramirez-Rios, José Juan Avilés-Bravo, Mario Moreno-Moreno, Luis Hernández-Martínez, Alfredo Morales-Sánchez

Institution: National Institute of Astrophysics, Optics and Electronics

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,207

OpenAlex ID: W4408337240

FWCI: 0.227

Cites: 41

Cited by: 1

Related to: 10