Year: 2025
Type: article
Abstract: Silicon G centers show significant promise as single photon sources in a scalable silicon platform. But these color centers have large nonradiative decay and a low Debye-Waller factor, limiting their usability in quantum applications. In this work, we demonstrate bright Purcell-enhanced emission from a silicon G center by coupling it to a nanophotonic cavity. The nanobeam cavity enhances the spontaneous emission rate of a single G center by a factor of 6, corresponding to a Purcell factor greater than 31 when accounting for decay into the phonon sideband. We obtain a spontaneous emission rate of 0.97 ns, which is the fastest single photon emission rate reported in silicon. With this radiative enhancement, we achieve an order of magnitude improvement in emitter brightness compared to previously reported values. These results pave the way for scalable quantum light sources on a silicon photonic chip.
Source: Nano Letters
Authors: Kyu-Young Kim, Chang-Min Lee, Amirehsan Boreiri, Purbita Purkayastha, Fariba Islam, Samuel Harper, Je-Hyung Kim, Edo Waks
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Awards: G1236032063, QII-TAQS: Quantum Machine Learning with Photonics, G1528141995, G2193698, G2488776250, G2672002187, QLCI-CI: NSF Quantum Leap Challenge Institute for Robust Quantum Simulation, G5231341540, G5303725066, Collaborative research: Quantum Communication with Loss-Protected Photonic Encoding, G8395630498
OpenAlex ID: W4408339948