Work

Terminal group engineering of Ti3C2Tx MXene on thermal emitter performance

Year: 2025

Type: article

Abstract: Ti 3 C 2 T x MXene has emerged as a promising material for diverse nanophotonics applications. In this study, we investigate how Ti 3 C 2 T x MXene terminal groups (–F, –O–, –OH) influence the performance of a planar thermal emitter with a VO 2 /SiO 2 /Ti 3 C 2 T x MXene structure. By examining four variants of Ti 3 C 2 T x MXene across the 2–20 µm spectral range, we demonstrate that the hysteresis loop threshold temperature remains constant for all MXene types due to the VO 2 phase change material. The average differential emissivity (Δε) between the semiconductor and metallic states of VO 2 varies significantly with terminal group composition. The VO 2 /SiO 2 /Ti 3 C 2 F 2 structure exhibits the highest differential emissivity of Δε = 0.42, while VO 2 /SiO 2 /Ti 3 C 2 (OH) 2 shows the lowest of Δε = 0.33. The remaining structures; VO 2 /SiO 2 /Ti 3 C 2 and VO 2 /SiO 2 /Ti 3 C 2 O 2 , demonstrate intermediate differential emissivity values of Δε = 0.41 and 0.38, respectively. These findings establish a foundation for controlling emissivity in applications such as energy harvesting, thermophotovoltaics, and radiative cooling systems. The ability to tailor thermal emission through MXene terminal group engineering presents opportunities for designing tunable photonic devices with precise thermal control capabilities for the next-generation of energy management systems.

Source: Scientific Reports

DOI: 10.1038/s41598-025-92638-w

Authors: Neda Daliran, Ali Reza Oveisi, Saba Daliran

Institution: Lorestan University

Language: English

Topic: Thermal Radiation and Cooling Technologies

Subfield: Civil and Structural Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: gold

Estimated APC paid: $2,690