Incomplete donor ionization based 2D-charge density and drain current model for δ-doped β-(AlxGa1−x)2O3/Ga2O3 HFET
Year: 2025
Type: article
Abstract: In this paper, we present a 2D-charge density model for a δ-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistor considering incomplete donor ionization. A region-based approach is implemented to model the 2D-charge density valid for all the gate voltages. The effect of donor energy and conduction band offset is studied using the unified model. Subsequently, the proposed 2D-charge density model is further utilized to develop a drain current model incorporating incomplete donor ionization. The obtained unified model for the 2D-charge density and drain current is validated with different experimental data, showing good accuracy. Hence, the proposed unified models will be instrumental to explore the donor ionization effect on 2D-charge density, which will help us select the type of donors to obtain optimum 2D-charge density along with the prediction of drain current for various high-power applications.
Source: APL Electronic Devices
DOI: 10.1063/5.0243779
Authors: Akash Patnaik, Pankaj Sharma
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4408357449